silicon avalanche diodes 258 www.littelfuse.com 400w surface mount transient voltage supressors p4sma series features ? rohs compliant ? for surface mounted applications in order to optimize board space ? low profile package built-in strain relief glass passivated junction low inductance excellent clamping capability repetition rate (duty cycle):0.01% fast response time: typically less than 1.0ps from 0 volts to v(br) for unidirectional types ? typical ir less than 1? above 10v high temperature soldering: 250?c/10 seconds at terminals devices for bipolar application for bidirectional use suffix ca for types p4sma6.8ca thru types p4sma550ca electrical characteristics apply in both directions maximum ratings and characteristics @25?c ambient temperature (unless otherwise noted) parameter peak pulse power dissipation on 10/1000? waveform (note 1.2,fig.1) peak pulse current of on 10/1000? waveform (note 1, fig.3) peak forward surge current, 8.3ms single half sine-wave superimposed on rated load, (jedec method)(note2,3) operating junction and storage temperature range value min 400 see table 1 40 -55 to +150 unit watts amps amps ? notes: 1. non-repetitive current pulse, per fig.3 and derated above t a = 25?c per fig.2 2. mounted on 5.0mm 2 (0.03mm thick) copper pads to each terminal 3. 8.3ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minutes maximum symbol p ppm i ppm i fsm t j, t stg mechanical specifications: weight: 0.002 ounce, 0.061 gram case: jedec do214ac. molded plastic over glass passivated junction mounting position: any polarity: color band denoted positive end (cathode) except bidirectional terminal: solder plated, solderable per mil-std- 750, method 2026 standard packaging: 12mm tape (eia std rs-481) agency approvals: recognized under the components program of underwriters laboratories. agency file numbers : e128667 p4sma ca voltage bi-directional 5% voltage t = tape and reeled (5000pcs) tolerance ordering information rohs
silicon avalanche diodes 259 www.littelfuse.com 6 silicon diode arrays 400w surface mount transient voltage supressors part number (uni) part number (bi) device marking code breakdown voltage v br (volts) @ i t maximum reverse leakage i r @ v r (?) maximum clamping voltage v c @ i pp (volts) maximum peak pulse current i pp (a) electrical specification @ tamb 25? p4sma6.8a p4sma6.8ca 6v8a 6v8c 5.80 6.45 7.14 10 10.5 39.0 1000 p4sma7.5a p4sma7.5ca 7v5a 7v5c 6.40 7.13 7.88 10 11.3 36.3 500 p4sma8.2a p4sma8.2ca 8v2a 8v2c 7.02 7.79 8.61 10 12.1 33.9 200 p4sma9.1a p4sma9.1ca 9v1a 9v1c 7.78 8.65 9.55 1 13.4 30.6 50 p4sma10a p4sma10ca 10a 10c 8.55 9.50 10.50 1 14.5 28.3 10 p4sma11a p4sma11ca 11a 11c 9.40 10.50 11.60 1 15.6 26.3 5 p4sma12a p4sma12ca 12a 12c 10.20 11.40 12.60 1 16.7 24.6 5 p4sma13a p4sma13ca 13a 13c 11.10 12.40 13.70 1 18.2 22.5 5 p4sma15a p4sma15ca 15a 15c 12.80 14.30 15.80 1 21.2 19.3 5 p4sma16a p4sma16ca 16a 16c 13.60 15.20 16.80 1 22.5 18.2 5 p4sma18a p4sma18ca 18a 18c 15.30 17.10 18.90 1 25.5 16.1 5 p4sma20a p4sma20ca 20a 20c 17.10 19.00 21.00 1 27.7 14.8 5 p4sma22a p4sma22ca 22a 22c 18.80 20.90 23.10 1 30.6 13.4 5 p4sma24a p4sma24ca 24a 24c 20.50 22.80 25.20 1 33.2 12.3 5 p4sma27a p4sma27ca 27a 27c 23.10 25.70 28.40 1 37.5 10.9 5 p4sma30a p4sma30ca 30a 30c 25.60 28.50 31.50 1 41.4 9.9 5 p4sma33a p4sma33ca 33a 33c 28.20 31.40 34.70 1 45.7 9.0 5 p4sma36a p4sma36ca 36a 36c 30.80 34.20 37.80 1 49.9 8.2 5 p4sma39a p4sma39ca 39a 39c 33.30 37.10 41.00 1 53.9 7.6 5 p4sma43a p4sma43ca 43a 43c 36.80 40.90 45.20 1 59.3 6.9 5 p4sma47a p4sma47ca 47a 47c 40.20 44.70 49.40 1 64.8 6.3 5 p4sma51a p4sma51ca 51a 51c 43.60 48.50 53.60 1 70.1 5.8 5 p4sma56a p4sma56ca 56a 56c 47.80 53.20 58.80 1 77.0 5.3 5 p4sma62a p4sma62ca 62a 62c 53.00 58.90 65.10 1 85.0 4.8 5 p4sma68a p4sma68ca 68a 68c 58.10 64.60 71.40 1 92.0 4.5 5 P4SMA75A p4sma75ca 75a 75c 64.10 71.30 78.80 1 103.0 4.0 5 p4sma82a p4sma82ca 82a 82c 70.10 77.90 86.10 1 113.0 3.6 5 p4sma91a p4sma91ca 91a 91c 77.80 86.50 95.50 1 125.0 3.3 5 p4sma100a p4sma100ca 100a 100c 85.50 95.00 105.00 1 137.0 3.0 5 p4sma110a p4sma110ca 110a 110c 94.00 105.00 116.00 1 152.0 2.7 5 p4sma120a p4sma120ca 120a 120c 102.00 114.00 126.00 1 165.0 2.5 5 p4sma130a p4sma130ca 130a 130c 111.00 124.00 137.00 1 179.0 2.3 5 p4sma150a p4sma150ca 150a 150c 128.00 143.00 158.00 1 207.0 2.0 5 p4sma160a p4sma160ca 160a 160c 136.00 152.00 168.00 1 219.0 1.9 5 p4sma170a p4sma170ca 170a 170c 145.00 162.00 179.00 1 234.0 1.8 5 p4sma180a p4sma180ca 180a 180c 154.00 171.00 189.00 1 246.0 1.7 5 p4sma200a p4sma200ca 200a 200c 171.00 190.00 210.00 1 274.0 1.5 5 p4sma220a p4sma220ca 220a 220c 185.00 209.00 231.00 1 328.0 1.3 5 p4sma250a p4sma250ca 250a 250c 214.00 237.00 263.00 1 344.0 1.2 5 p4sma300a p4sma300ca 300a 300c 256.00 285.00 315.00 1 414.0 1.0 5 p4sma350a p4sma350ca 350a 350c 300.00 332.00 368.00 1 482.0 0.9 5 p4sma400a p4sma400ca 400a 400c 342.00 380.00 420.00 1 548.0 0.8 5 p4sma440a p4sma440ca 440a 440c 376.00 418.00 462.00 1 602.0 0.7 5 p4sma480a p4sma480ca 480a 480c 408.00 456.00 504.00 1 658.0 0.6 5 p4sma510a p4sma510ca 510a 510c 434.00 485.00 535.00 1 698.0 0.6 5 p4sma530a p4sma530ca 530a 530c 477.00 503.50 556.50 1 725.0 0.6 5 p4sma540a p4sma540ca 540a 540c 459.00 513.00 567.00 1 740.0 0.5 5 p4sma550a p4sma550ca 550a 550c 495.00 522.50 577.50 1 760.0 0.5 5 reverse stand off voltage v r (volts) uni bi min max for bidirectional type having vrwm of 10 volts and less, the ir limit is double. the avaliable parts are "a" type only, the parts without a (vbr is 10%) is not avaliable. test current i t (ma) p4sma series rohs
silicon avalanche diodes 260 www.littelfuse.com fig. 1 peak pulse power rating fig. 3 pulse waveform fig. 5- typ. transient thermal impedance fig. 6- maximum non-repetitive peak fig. 4- typical junction capacitance fig. 2 pulse derating curve t d - pulse width (sec.) t a - ambient temperature ( ? c) p ppm - peak pulse power (kw) i ppm - peak pulse current, % i rsm transient thermal impedance ( ? c/w) i psm -peak forward surge current (a) c j -junction capacitance (pf) peak pulse power (p pp ) or current (i pp ) derating in percentage, % 0.1s 1.0s 10s 100s 1.0ms 10ms 0.1 1 10 100 0.2x0.2"(5.0x5.0mm) copper pad areas 0 0 0 0.1 1.0 10 100 50 100 150 1.0 2.0 3.0 4.0 0.001 0.01 0.1 1 10 100 1000 1 10 100 50 200 20000 10000 1000 100 10 1.0 10 100 200 10 5 100 0 25 25 50 50 75 75 100 100 125 150 175 200 t p - pulse duration(sec) number of cycles at 60hz v wm -reverse stand-off voltage (v) forward surge current uni-directional only t r =10sec peak value i ppm p4sma6.8- p4sma91a p4sma100a- p4sma170a half value i ppm 2 t j =25 ? c pulse width(td) is defined as the point where the peak current decays to 50% of i ppm 10/1000sec. waveform as defined by r.e.a t d tj=tj max. 8.3 single half sine-wave (jedec method) uni-directional bi-directional t j =25 ? c f=1.0mhz v sig =50mvp-p v r , measured at stand-off voltage, v wm non-repetitive pulse waveform shown in fig.3 t a = 25 ? c uni-directional bi-directional 0.2x0.2"(5.0x5.0mm) copper pad areas 400w surface mount transient voltage supressors p4sma series rohs ratings and characteristic curves t a =25?c unless otherwise noted
silicon avalanche diodes 261 www.littelfuse.com 6 silicon diode arrays 400w surface mount transient voltage supressors p4sma series rohs do-214ac (sma) 0.177 (4.50) 0.157(3.99) 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) 0.030 (0.76) 0.208 (5.28) 0.194 (4.93) 0.090 (2.29) 0.078 (1.98) 0.008 (0.203) max dimensions in inches and (millimeters) cathode band package outline dimensions and pad layouts
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